[PDF.60bl] Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567 (MRS Proceedings)

Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567 (MRS Proceedings)

[PDF.xj95] Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567 (MRS Proceedings)

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 | #5394095 in Books |  Cambridge University Press |  1999-09-01 | Original language:English | PDF # 1 |  9.30 x1.50 x6.40l,2.20 | File type: PDF | 615 pages

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Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and <1.5nm within 10 years. While it is obvious that SiO2 and oxynitride dielectrics will be with us for the near future, their processing and performance will face severe challenges. Alternate gate dielectric materials with higher dielectric constants are also being developed. They will be ...

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